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2 article(s) from Mazanik, Alexander V.

Influence of wide band gap oxide substrates on the photoelectrochemical properties and structural disorder of CdS nanoparticles grown by the successive ionic layer adsorption and reaction (SILAR) method

Mikalai V. Malashchonak,
Alexander V. Mazanik,
Olga V. Korolik,
Еugene А. Streltsov and
Anatoly I. Kulak

Beilstein J. Nanotechnol. 2015, 6, 2252–2262, doi:10.3762/bjnano.6.231

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Figure 1: SEM images of In₂O₃ mesoporous films (a,d), ZnO platelet crystallites (b,e) and anodic TiO₂ nanotub...

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Figure 2: Spectral dependence of IPCE for ZnO/CdS (a), TiO₂/CdS (b), and In₂O₃/CdS heterostructures (c). IPCE...

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Figure 3: CdS band gap E_g dependence on the number of SILAR deposition cycles.

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Figure 4: Spectral dependence of IPCE in lnY–hν coordinates for ZnO/CdS (a), TiO₂/CdS (b), and In₂O₃/CdS hete...

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Figure 5: Raman spectra for TiO₂/CdS (a,b), ZnO/CdS (c,d), and In₂O₃/CdS (e,f) films. Excitation: 473 nm/25 μ...

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Figure 6: Approximation of Raman spectrum for TiO₂/CdS film (N = 30) in the vicinity of the CdS LO band by su...

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Figure 7: Intensity of CdS LO band as a function of the SILAR cycle number. Excitation: 473 nm/25 μW (a) and ...

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Figure 8: Position of CdS LO band as a function of the SILAR cycle number. Excitation: 473 nm/25 μW (a) and 5...

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Figure 9: FWHM of CdS LO band as a function of the SILAR cycle number. Excitation: 473 nm/25 μW (a) and 532 n...

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Figure 10: Intensity ratio of CdS 2LO and LO bands as a function of the SILAR cycle number. Excitation: 473 nm...

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Figure 11: Intensity ratio of CdS SO and LO bands as a function of the SILAR cycle number. Excitation: 473 nm/...

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Full Research Paper

Published 30 Nov 2015

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Photoelectrochemical and Raman characterization of In₂O₃ mesoporous films sensitized by CdS nanoparticles

Mikalai V. Malashchonak,
Sergey K. Poznyak,
Eugene A. Streltsov,
Anatoly I. Kulak,
Olga V. Korolik and
Alexander V. Mazanik

Beilstein J. Nanotechnol. 2013, 4, 255–261, doi:10.3762/bjnano.4.27

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Figure 1: TEM images and electron diffraction patterns (insets) for In₂O₃(400) (a) and In₂O₃(400) after 30 SI...

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Figure 2: Cross-sectional SEM image of the In₂O₃(400) film after 30 SILAR CdS deposition cycles (a) and AES p...

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Figure 3: Barrett–Joyner–Halenda desorption-model pore-volume distribution of the In₂O₃(400) mesoporous films...

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Figure 4: Absorption spectra of the In₂O₃(400) and In₂O₃(400)/CdS films deposited onto a quartz substrate. Th...

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Figure 5: Raman spectrum of the In₂O₃(400)/CdS system prepared by using 40 SILAR cycles of CdS deposition aft...

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Figure 6: Dependence of the CdS LO phonon peak position (1) and FWHM (2) on the number of SILAR cycles.

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Figure 7: Photocurrent versus electrode-potential curves recorded under UV illumination of the mesoporous In₂O...

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Figure 8: Photocurrent versus electrode potential curves recorded under visible-light illumination of the In₂O...

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Figure 9: Photocurrent spectra of In₂O₃(400)/CdS film electrodes in 0.1 М Na₂S + 0.1 M Na₂SO₃ + 0.1 M NaOH so...

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Figure 10: Analysis of the photocurrent spectra shown in Figure 9 in coordinates of (Y·hν)² versus hν typical for dire...

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Full Research Paper

Published 11 Apr 2013

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Influence of wide band gap oxide substrates on the photoelectrochemical properties and structural disorder of CdS nanoparticles grown by the successive ionic layer adsorption and reaction (SILAR) method

Photoelectrochemical and Raman characterization of In2O3 mesoporous films sensitized by CdS nanoparticles

Photoelectrochemical and Raman characterization of In₂O₃ mesoporous films sensitized by CdS nanoparticles